Development of Inductively Coupled Plasma Gas Ion Source for Focused Ion Beam

유도결합형 플라즈마 소스를 이용한 집속 이온빔용 가스 이온원 개발

  • 이승훈 (한국기계연구원 부설 재료연구소) ;
  • 김도근 (한국기계연구원 부설 재료연구소) ;
  • 강재욱 (한국기계연구원 부설 재료연구소) ;
  • 김태곤 (연세대학교 기계공학부) ;
  • 민병권 (연세대학교 기계공학부) ;
  • 김종국 (한국기계연구원 부설 재료연구소)
  • Received : 2010.05.06
  • Accepted : 2010.09.27
  • Published : 2011.01.01

Abstract

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

Keywords

References

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