Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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The Effect of Slurry and Wafer Morphology on the SiC Wafer Surface Quality in CMP Process

CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향

  • Park, Jong-Hwi (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Yang, Woo-Sung (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Jung, Jung-Young (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Lee, Sang-Il (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Park, Mi-Seon (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Lee, Won-Jae (Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University) ;
  • Kim, Jae-Yuk (R&D Center for Advanced Materials, SsangYong Materials Corp.) ;
  • Lee, Sang-Don (R&D Center for Advanced Materials, SsangYong Materials Corp.) ;
  • Kim, Ji-Hye (R&D Center for Advanced Materials, SsangYong Materials Corp.)
  • 박종휘 (동의대학교 융합부품공학과) ;
  • 양우성 (동의대학교 융합부품공학과) ;
  • 정정영 (동의대학교 융합부품공학과) ;
  • 이상일 (동의대학교 융합부품공학과) ;
  • 박미선 (동의대학교 융합부품공학과) ;
  • 이원재 (동의대학교 융합부품공학과) ;
  • 김재육 (쌍용멀티리얼 (주)) ;
  • 이상돈 (쌍용멀티리얼 (주)) ;
  • 김지혜 (쌍용멀티리얼 (주))
  • Received : 2011.04.25
  • Accepted : 2011.05.31
  • Published : 2011.07.31
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Abstract

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

Keywords

References

  1. C. L. Neslen, W. C. Mitchel, and R. L. Hengehold "Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H-SiC," J. Electron. Mater., 30 [10] 1271-75 (2001).
  2. L. Zhou, V. Audurier, P. Pirouz, and J. A. Powell "Chemomechanical Polishing of Silicon Carbide," J. Electrochem. Soc., 144 [6] L161-L163 (1997). https://doi.org/10.1149/1.1837711
  3. H. J. Lee, B. Y. Park, H. S. Lee, S. H. Jeong, and H. D. Jeong, "The Effect of Mixed Abrasive Slurry on CMP of SiC Substrate," Material Science Forum., 569 133-36 (2008). https://doi.org/10.4028/www.scientific.net/MSF.569.133
  4. V. D. Heydemann, W. J. Everson, R. D. Gamble, D. W. Snyder, and M. Skowronski, "Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates," Mater. Sci. Forum., 457 805-8 (2004). https://doi.org/10.4028/www.scientific.net/MSF.457-460.805
  5. Y. S. Jeong, H. J. Kim, J. Y. Choi, and H. D. Jeong, "The Effect of Slurry Rate and Temperature on CMP Characteristic," J. Kor. Soc. Pre. Eng., 21 46-52 (2004)