Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering

RF Sputtering법에 의한 산화주석 박막의 진공 열처리 효과

  • Kim, Sun-Phil (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Young-Rae (Microsystem Packaging Center, Seoul Technopark) ;
  • Kim, Sung-Dong (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sarah Eun-Kyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 김선필 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김영래 (서울테크노파크 MSP 기술지원센터) ;
  • 김성동 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김사라은경 (서울과학기술대학교 NID융합기술대학원)
  • Received : 2011.06.01
  • Accepted : 2011.06.20
  • Published : 2011.07.31
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Abstract

Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.

Keywords

References

  1. M. Batzill and U. Diebold, "The Surface and Materials Science of Tin Oxide", Prog. Surf. Sci., 79 47-154 (2005). https://doi.org/10.1016/j.progsurf.2005.09.002
  2. B. G. Lewis and D.C. Paine, "Applications and Processing of Transparent Conducting Oxides", MRS Bulletin, 25 [8] 22-27 (2000). https://doi.org/10.1557/mrs2000.147
  3. J. Kim, B. Kim, S. Choi, J. Park, and J. Park, "$SnO_2$ Semiconducting Nanowires Network and Its $NO_2$ Gas Sensor Application (in Korean)", Kor. J. Mater. Res., 20 [4] 223-27 (2010). https://doi.org/10.3740/MRSK.2010.20.4.223
  4. S. E. Kim and M. Oliver, "Structural, Electrical, and Optical Properties of Reactively Sputtered $SnO_2$", Thin Films, Met. Mater. Int., 16 [3] 441-46 (2010).
  5. W. Guo, L. Fu,Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, and H. T. Cao, "Microstructure, Optical, and Electrical Properties of p-type SnO Thin Films", Appl. Phys. Lett., 96 042113 (2010). https://doi.org/10.1063/1.3277153
  6. J. L. Huang, Y. Pan, J. Y. Chang, and B. S. Yau, "Annealing Effects on Properties of Antimony Tin Oxide Thin Films Deposited by RF Reactive Magnetron", Surf. Coat. Tech., 184 188-93 (2004). https://doi.org/10.1016/j.surfcoat.2003.11.004
  7. V. V. Kissine, S. A. Voroshilov, and V. V. Sysoev, "Oxygen Flow Effect on Gas Sensitivity Properties of Tin Oxide Film Prepared by R.F. Sputtering", Sens. Actuat. B, 55 55-59 (1999). https://doi.org/10.1016/S0925-4005(99)00022-2
  8. I. H. Kim, J. H. Ko, D. Kim, K. S. Lee, T. S. Lee, J. Jeong, B. Cheong, Y. J. Baik, and W. M. Kim, "Scattering Mechanism of Transparent Conducting Tin Oxide Films Prepared by Magnetron Sputtering", Thin Solid Films, 515 2475-80 (2006). https://doi.org/10.1016/j.tsf.2006.07.020
  9. E. Cetinorgua, S. Goldsmith, Y. Rosenberg, and R. L. Boxman, "Influence of Annealing on the Physical Properties of Filtered Vacuum Arc Deposited Tin Oxide Thin Films", J. Non-Crystalline Solids, 353 2595-602 (2007). https://doi.org/10.1016/j.jnoncrysol.2007.04.031
  10. Z. R. Dai, Z. W. Pan, and Z. L. Wang, "Growth and Structure Evolution of Novel Tin Oxide Diskettes", J. Am. Chem. Soc., 124 8673-80 (2002) https://doi.org/10.1021/ja026262d
  11. C. Y. Koo, K. J. Kim, K. H. Kim, and H. Y. Lee, "Room Temperature Deposition and Heat Treatment Behavior of ATO Thin Films by Ion Beam Sputtering (in Korean)", J. Kor. Ceram. Soc., 37 [11] 1025-32 (2000).
  12. Y. Kim, S. P. Kim, S. D. Kim, and S. E. Kim, "Characterization and Fabrication of Tin Oxide Thin Film by RF Reactive Sputtering (in Korean)", Kor. J. Mater. Res., 20 [9] 42-47 (2010). https://doi.org/10.3740/MRSK.2010.20.9.494
  13. C. Suryanaraynara and M. G. Norton, X-ray diffraction-A Practical Approach, p.212, Plenum Press, New York, 1998.
  14. C. V. Thompson, "Grain Growth in Polycrystalline Thin Films of Semiconductors", Inter. Sci., 6 85-93 (1998). https://doi.org/10.1023/A:1008616620663
  15. T. Ungar, "Microstructural Parameters from X-ray Diffraction Peak Broadening", Scripta Materialia, 51 [8] 777-81 (2004). https://doi.org/10.1016/j.scriptamat.2004.05.007
  16. E. Burstein, "Anomalous Optical Absorption Limit in InSb", Phys. Rev., 93 [3] 632-33 (1954). https://doi.org/10.1103/PhysRev.93.632
  17. C. Kilic and A. Zunger, "Origins of Coexistence of Conductivity and Transparency in $SnO_2$", Phys. Rev. Lett., 88 [9] 095501 (2002). https://doi.org/10.1103/PhysRevLett.88.095501
  18. O. Stenzel, The Physics of Thin Film Optical Spectra: An Introduction, 1st ed., p.214, Springer, 2005.

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  1. Effect of RF Power on SnO Thin Films Obtained by Sputtering vol.49, pp.5, 2012, https://doi.org/10.4191/kcers.2012.49.5.399
  2. Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target vol.26, pp.4, 2016, https://doi.org/10.3740/MRSK.2016.26.4.222