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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology

  • Campos-Roca, Y. (Tecnologias de los computadores y las comunicaciones, University of Extremadura) ;
  • Tessmann, A. (Department of High Frequency Devices and Circuits, Fraunhofer IAF) ;
  • Massler, H. (Department of High Frequency Devices and Circuits, Fraunhofer IAF) ;
  • Leuther, A. (Department of High Frequency Devices and Circuits, Fraunhofer IAF)
  • Received : 2010.12.12
  • Accepted : 2011.03.23
  • Published : 2011.10.31
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Abstract

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

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References

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