The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology

0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기

  • 김경민 (고려대학교 전기전자전파공학부) ;
  • 김남형 (고려대학교 전기전자전파공학부) ;
  • 이재성 (고려대학교 전기전자전파공학부)
  • Received : 2012.01.03
  • Accepted : 2012.01.06
  • Published : 2012.02.29
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Abstract

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

본 논문에서는 push-push 방식을 사용하여 설계 제작된 0.18-${\mu}m$ SiGe BiCMOS 공정 기반 70 GHz와 140 GHz에서 모두 동작하는 듀얼 밴드 전압 제어 발진기(Voltage Controlled Oscillator: VCO)의 결과를 보인다. 측정 결과, 본 전압 제어 발진기는 조절 전압이 0.2 V에서 2 V까지 변하는 동안 하위 밴드와 상위 밴드에서 각각 67.9~76.9 GHz, 134.3~154.5 GHz의 주파수 조절 범위를 갖는다. 보정 후의 최대 출력 전력은 각각 -0.55 dBm과 -15.45dBm이었다. 본 전압 제어 발진기는 4 V의 전원으로부터 18 mA의 DC 전류를 소모한다.

Keywords

References

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