Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Concentration

채널도핑강도에 대한 이중게이트 MOSFET의 DIBL분석

  • Received : 2011.11.16
  • Accepted : 2011.12.27
  • Published : 2012.03.31
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Abstract

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

본 연구에서는 이중게이트(Double Gate; DG) MOSFET에서 발생하는 단채널효과 중 하나인 드레인유기장벽 감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자 한다. 드레인유도장벽감소 현상은 채널의 길이가 짧아질 때 드레인 전압이 소스측 전위장벽에 영향을 미쳐 장벽의 높이를 감소시키는 현상으로써 단채널에서 발생하는 매우 중요한 효과이다. 본 연구에서는 DIBL을 해석하기 위하여 이미 발표된 논문에서 타당성이 입증된 포아송 방정식의 해석학적 전위분포를 이용할 것이다. 이 모델은 특히 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 소자 파라미터인 채널두께, 산화막두께, 도핑농도 등에 대하여 드레인유도장벽감소의 변화를 관찰하고자 한다.

Keywords

References

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