Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effects of Device Layout On The Performances of N-channel MuGFET

소자 레이아웃이 n-채널 MuGFET의 특성에 미치는 영향

  • Lee, Sung-Min (Department of Electronics Engineering, University of Incheon) ;
  • Kim, Jin-Young (Department of Electronics Engineering, University of Incheon) ;
  • Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon) ;
  • Park, Jong-Tae (Department of Electronics Engineering, University of Incheon)
  • Received : 2011.09.01
  • Accepted : 2012.01.05
  • Published : 2012.01.25
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Abstract

The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.

전체 채널 폭은 같지만 핀 수와 핀 폭이 다른 n-채널 MuGFET의 특성을 측정 비교 분석하였다. 사용된 소자는 Pi-gate 구조의 MuGFET이며 핀 수가 16이며 핀 폭이 55nm인 소자와 핀 수가 14이며 핀 폭이 80nm인 2 종류의 소자이다. 측정 소자성능은 문턱전압, 이동도, 문턱전압 roll-off, DIBL, inverse subthreshold slope, PBTI, hot carrier 소자열화 및 드레인 항복전압 이다. 측정 결과 핀 폭이 작으며 핀 수가 많은 소자의 단채널 현상이 우수한 것을 알 수 있었다. PBTI에 의한 소자열화는 핀 수가 많은 소자가 심하며 hot carrier에 의한 소자열화는 비슷한 것을 알 수 있었다. 그리고 드레인 항복 전압은 핀 폭이 작고 핀 수가 많은 소자가 높은 것을 알 수 있었다. 단채널 현상과 소자열화 및 드레인 항복전압 특성을 고려하면 MuGFET소자 설계 시 핀 폭을 작게 핀 수를 많게 하는 것이 바람직하다.

Keywords

References

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