Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Electrical stabilities of half-Corbino thin-film transistors with different gate geometries

  • Jung, Hyun-Seung (MEMS Display and Sensor Laboratory, School of Electronic Engineering, Soongsil University) ;
  • Choi, Keun-Yeong (MEMS Display and Sensor Laboratory, School of Electronic Engineering, Soongsil University) ;
  • Lee, Ho-Jin (MEMS Display and Sensor Laboratory, School of Electronic Engineering, Soongsil University)
  • Received : 2011.10.18
  • Accepted : 2011.12.04
  • Published : 2012.03.30
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Abstract

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

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Cited by

  1. P‐28: Novel Asymmetric Source‐drain Thin Film Transistors Fabricated by Atomic Layer Deposition vol.50, pp.1, 2012, https://doi.org/10.1002/sdtp.13177