Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Performance of Amorphous SiZnSnO TFTs Depending on Annealing Temperature

실리콘산화아연주석 산화물 반도체의 후열처리 온도변화에 따른 트랜지스터의 전기적 특성 연구

  • Lee, Sang-Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2012.07.10
  • Accepted : 2012.08.21
  • Published : 2012.09.01
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Abstract

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

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References

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