JSTS:Journal of Semiconductor Technology and Science

  • 제13권3호
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  • Pages.252-258
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

  • 투고 : 2012.11.08
  • 심사 : 2013.01.29
  • 발행 : 2013.06.30
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초록

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

키워드

참고문헌

  1. M. C. Poon, C. H. HO, F. Deng, S. S. Lau, and H. Wong, "Thermal stability of cobalt and nickel silicides", Microelectronics Reliability, Vol. 38, No. 9, pp. 1495-1498, Sep, 1998. https://doi.org/10.1016/S0026-2714(98)00045-6
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  9. D. Deduytsche, C. Detavernier, R. L. Van Meirhaeghe, J. L. Jordan-Sweet, and C. Lavoie, "Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements", Journal of Applied Physics, Vol. 101, No. 4, 044508, 2007. https://doi.org/10.1063/1.2433133
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피인용 문헌

  1. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs vol.53, pp.8S3, 2014, https://doi.org/10.7567/JJAP.53.08NE05
  2. A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer vol.16, pp.2, 2016, https://doi.org/10.5573/JSTS.2016.16.2.210
  3. Study of SiO2 on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry pp.1573-4889, 2019, https://doi.org/10.1007/s11085-019-09885-2