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크기 조절이 가능한 은 나노입자 형성을 위한 박막의 열처리 효과

Formation of Size-controllable Ag Nanoparticles on Si Substrate by Annealing

  • 이상훈 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 이태일 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 문경주 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 명재민 (연세대학교 신소재공학과 정보전자재료연구실)
  • Lee, Sang Hoon (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Tae Il (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Moon, Kyeong-Ju (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Myoung, Jae Min (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • 투고 : 2013.06.14
  • 심사 : 2013.07.18
  • 발행 : 2013.07.27

초록

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.

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