Applied Science and Convergence Technology

한국진공학회 (The Korean Vacuum Society)
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Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet

  • Yang, Wonkyun (Department of Materials Science and Engineering & Plasma Materials Research Center, Kunsan National University) ;
  • Joo, Junghoon (Department of Materials Science and Engineering & Plasma Materials Research Center, Kunsan National University)
  • 투고 : 2014.05.30
  • 심사 : 2014.05.31
  • 발행 : 2014.05.30
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초록

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

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