한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권8호
  • /
  • Pages.497-500
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  • 2014
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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P-pillar 식각 각도에 따른 Super Junction MOSFET의 전기적 특성 분석에 관한 연구

Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • 투고 : 2014.07.17
  • 심사 : 2014.07.24
  • 발행 : 2014.08.01
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초록

In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

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참고문헌

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