JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs

  • Lee, Sangjun (Department of Electronic Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronic Engineering, Hankuk University of Foreign Studies)
  • Received : 2015.06.03
  • Accepted : 2015.08.10
  • Published : 2015.12.30
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Abstract

A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.

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References

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