Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth and characterization of bulk GaN single crystals by basic ammonothermal method

Basic 암모노써멀 방법에 의한 벌크 GaN 단결정의 성장 및 특성

  • Shim, Jang Bo (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology) ;
  • Lee, Young Kuk (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
  • 심장보 (한국화학연구원 박막재료 연구센터) ;
  • 이영국 (한국화학연구원 박막재료 연구센터)
  • Received : 2016.04.01
  • Accepted : 2016.04.20
  • Published : 2016.04.30
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Abstract

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

Basic 암모노써멀 방법을 사용하여 벌크 GaN 단결정을 성장시켰다. 종자 결정은 Hydride vapor phase epitaxy법으로 성장한 c면의 GaN 템플릿을 사용하고 광화제는 sodium metal, amide, azide를 사용하였다. 결정 성장 온도는 $500{\sim}600^{\circ}C$, 성장 압력은 2~3 kabr에서 실시하였다. c 축의 결정 성장 속도는 운용 압력이 증가함에 따라 선형적으로 증가하였다. Cathodoluminescence로 측정한 평균 전위 밀도는 $1{\times}10^5/cm^2$였다. Double Crystals X-ray Diffraction로 측정한 (002)면의 반치폭은 Ga 면에 대해서는 약 270 arcsec, N 면에 대해서는 약 80 arcsec이었다.

Keywords

References

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