Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Study on the Properties of TiO2 Film Deposited by ALD at Low Temperature

ALD로 저온에서 증착된 TiO2 박막의 막질에 대한 연구

  • Park, Won Hee (Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology) ;
  • Shin, Jeong Woo (Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology) ;
  • Yang, Byung Chan (Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology) ;
  • Park, Man-Jin (Korea Electronics-Machinery Convergence Technology Institute(KEMCTI)) ;
  • Jang, Dong Young (Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology) ;
  • An, Jihwan (Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology)
  • 박원희 (서울과학기술대학교 MSDE전공) ;
  • 신정우 (서울과학기술대학교 MSDE전공) ;
  • 양병찬 (서울과학기술대학교 MSDE전공) ;
  • 박만진 (한국전자기계융합기술원) ;
  • 장동영 (서울과학기술대학교 MSDE전공) ;
  • 안지환 (서울과학기술대학교 MSDE전공)
  • Received : 2016.05.09
  • Accepted : 2016.06.24
  • Published : 2016.06.30
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Abstract

This paper covers the study on the properties of $TiO_2$ film deposited by atomic layer deposition (ALD) using TTIP and water at various temperatures including the low temperature range of <$150^{\circ}C$. At low deposition temperature, ALD $TiO_2$ films showed uniform growth rate per cycle ($0.3{\AA}/cycle$), good uniformity, smooth surface, and homogenous amorphicity. They also showed good conformality of >80% on the trench structure with the high aspect ratio of up to 75. However, relatively high concentration of impurities (C~4-7 at%) in the film was observed due to low deposition temperature.

본 논문은 저온(<$150^{\circ}C$)에서 원자층 증착법(ALD)으로 증착된 $TiO_2$ 박막의 물리적, 화학적 막질에 대한 연구 결과를 보여준다. $TiO_2$의 ALD는 TTIP(Titanium(IV)isopropoxide)와 물을 이용하여 진행되었다. $150^{\circ}C$ 미만에서 증착시, ALD $TiO_2$의 성장률은 약 $0.3{\AA}/cycle$로 증착 온도 및 위치에 상관없이 거의 일정한 성장률을 보였다. 또한 SEM분석에서는 $200^{\circ}C$ 이상에서의 증착과 대조적으로, $150^{\circ}C$ 미만에서 증착된 박막은 부드러운 표면을 보였다. 투과전자현미경(TEM) 분석을 통해 이러한 특징이 저온에서 균질한 비정질의 막이 증착되었기 때문이라는 점을 알 수 있었다. 또한 저온 증착임에도 불구하고 종횡비가 1:75인 고종횡비 구조에도 80% 이상의 형상 적응성을 보였다. 그러나 저온 증착의 영향으로 X-선 광전자 분광기(XPS) 분석을 통해 4~7 at% 정도 함량의 탄소 불순물이 검출됨을 확인하였다.

Keywords

References

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