Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System

  • Lee, Woojin (Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.) ;
  • Fukazawa, Atsuki (ASM Japan K.K., R&D Process Development) ;
  • Choa, Yong-Ho (Functional Nano-Materials Research Lab, Department of Chemical Engineering, Hanyang University)
  • Received : 2016.07.01
  • Accepted : 2016.07.14
  • Published : 2016.09.27
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Abstract

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

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