한국정보통신학회논문지 (Journal of the Korea Institute of Information and Communication Engineering)

  • 제20권9호
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  • Pages.1755-1762
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  • 2016
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  • 2234-4772(pISSN)
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  • 2288-4165(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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입력전압 범위가 향상된 저면적 이중출력 스위치드 커패시터 DC-DC 변환기

A Small Areal Dual-Output Switched Capacitor DC-DC Converter with a Improved Range of Input Voltage

  • Hwang, Seon-Kwang (School of Electrical Engineering and Computer Science, Chungbuk National University) ;
  • Kim, Seong-Yong (Silliconworks) ;
  • Woo, Ki-Chan (School of Electrical Engineering and Computer Science, Chungbuk National University) ;
  • Kim, Tae-Woo (School of Electrical Engineering and Computer Science, Chungbuk National University) ;
  • Yang, Byung-Do (Department of Electronics Engineering, Chungbuk National University)
  • 투고 : 2016.07.25
  • 심사 : 2016.08.08
  • 발행 : 2016.09.30
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초록

본 논문에서는 입력전압 범위가 향상된 저면적 이중출력 스위치드 커패시터 DC-DC 변환기를 제안하였다. 기존의 스위치드 커패시터는 면적이 작고 저렴하지만, 효율적인 전압변환을 하는 입력전압의 범위가 좁고 다중출력의 경우 면적이 커지고 전력효율이 낮아진다. 제안된 스위치드 커패시터 DC-DC 변환기는 입력전압에 따라 커패시터 어레이 구조를 변경하여 최적의 효율을 갖는 입력 범위를 증가시켰다. 그리고 두 개의 스위치 어레이를 공유함으로써 스위치와 커패시터 수를 32개에서 25개로 줄였다. 제안된 변환기는 $0.18{\mu}m$ CMOS 공정에서 제작하였다. 시뮬레이션 결과 입력전압 범위는 0.7~1.8V이고, 최대 전력 효율은 90%이며, 칩의 면적은 $0.255mm^2$이다.

In this paper, a small areal dual-output SC(switched capacitor) DC-DC converter with a improved range of an input voltage is presented. The conventional SC DC-DC converter has an advantage of low cost and small chip area. But, it has a narrow input voltage range to convert efficiently. Also, it has a lager chip area and a lower power efficiency from multiple outputs. The proposed SC DC-DC converter improves the power efficiency by using the capacitor array structure which efficiently converts the voltage according to the input voltage. By sharing two switch array, it reduces the number of switches and capacitors from 32 to 25. The proposed SC DC-DC converter was manufactured in a $0.18{\mu}m$ CMOS process. In the simulation, the range of the input voltage is 0.7~ 1.8V, the max. power efficiency is 90%, and the chip area is $0.255mm^2$.

키워드

참고문헌

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