전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제66권2호
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  • Pages.370-378
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  • 2017
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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N2/NH3/SiH4 유도 결합형 플라즈마의 압력과 혼합가스 비율에 따른 이온 및 중성기체 밀도 분포

Distribution of Ions and Molecules Density in N2/NH3/SiH4 Inductively Coupled Plasma with Pressure and Gas Mixture Ratio)

  • Seo, Kwon-Sang (Dept. of Electrical and Computer Engineering, Pusan National University) ;
  • Kim, Dong-Hyun (Dept. of Electrical and Computer Engineering, Pusan National University) ;
  • Lee, Ho-Jun (Dept. of Electrical and Computer Engineering, Pusan National University)
  • 투고 : 2016.12.12
  • 심사 : 2017.01.02
  • 발행 : 2017.02.01
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초록

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

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