The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication and Characterizations of Stretchable Thin-Film Transistor using Parylene Gate Insulating Layer

파릴렌 게이트 절연층을 사용한 신축성 박박 트랜지스터의 제작 및 특성

  • Jung, Soon-Won (Industry and Academy Cooperation Foundation, Cheongju University) ;
  • Ryu, Bong-Jo (Dept. of Mechanical Engineering, Hanbat University) ;
  • Koo, Kyung-Wan (Dept. of ICT Automotive Engineering, Hoseo University)
  • Received : 2016.12.26
  • Accepted : 2017.03.16
  • Published : 2017.04.01
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Abstract

We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field- effect mobility of $5cm^2V^{-1}s^{-1}$ and a current on/off ratio of $10^5$ at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %.

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References

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