한국재료학회지 (Korean Journal of Materials Research)

  • 제27권4호
  • /
  • Pages.221-228
  • /
  • 2017
  • /
  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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습식 산화법으로 성장된 산화구리입자를 이용한 방열 컴파운드 제조 및 특성 연구

Characterizations of Thermal Compound Using CuO Particles Grown by Wet Oxidation Method

  • Lee, Dong Woo (Research & Development Institute, Youngyiel Precision Co., Ltd.) ;
  • Um, Chang Hyun (Research & Development Institute, Youngyiel Precision Co., Ltd.) ;
  • Chu, Jae Uk (Research & Development Institute, Youngyiel Precision Co., Ltd.)
  • 투고 : 2016.05.31
  • 심사 : 2017.03.16
  • 발행 : 2017.04.27
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초록

Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu ($0.1{\mu}m$ and $7{\mu}m$) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at $75^{\circ}C$. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from $0.1{\mu}m$ Cu particles increased by 192.5 % and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

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