한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권5호
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  • Pages.294-300
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  • 2017
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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비정질 텔루륨 산화물 박막 특성에 미치는 O2/Ar 가스비율의 영향

Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films

  • 공헌 (전남대학교 신화학소재공학과) ;
  • 정건홍 (전남대학교 신화학소재공학과) ;
  • 여종빈 (전남대학교 촉매연구소) ;
  • 이현용 (전남대학교 신화학소재공학과)
  • Kong, Heon (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Jung, Gun-Hong (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Yeo, Jong-Bin (Research Institute of Catalysis, Chonnam National University) ;
  • Lee, Hyun-Yong (Department of Advanced Chemicals and Engineering, Chonnam National University)
  • 투고 : 2017.01.06
  • 심사 : 2017.03.08
  • 발행 : 2017.05.01
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초록

$TeO_x$ thin films were deposited at various $O_2$/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from $TeO_2$ and Te targets. X-ray diffraction (XRD) results revealed that the $TeO_x$ thin films were amorphous. The structure and chemical composition of the $TeO_x$ thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the $TeO_x$ thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the $O_2$/Ar gas-flow ratios, the atomic composition ratio of $TeO_x$ thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing $O_2$/Ar gas-flow ratio, the refractive index of the $TeO_x$ thin films decreased and the optical bandgap of the films increased.

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