Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology

  • Lee, Iljin (School of Electrical Engineering, Korea University) ;
  • Kim, Junghyun (Devision of Electronic Engineering, Hanyang University) ;
  • Jeon, Sanggeun (School of Electrical Engineering, Korea University)
  • Received : 2017.04.07
  • Accepted : 2017.07.11
  • Published : 2017.07.31
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Abstract

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

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References

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