전기전자학회논문지 (Journal of IKEEE)

  • 제22권1호
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  • Pages.80-86
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  • 2018
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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SCR 기반 고감내 특성을 갖는 기생 PNP BJT 삽입형 새로운 ESD 보호회로에 관한 연구

A Study on a New ESD Protection Circuit with Parasitic PNP BJT Insertion Type with High Robustness Characteristics Based on SCR

  • Chae, Hee-Guk (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Do, Kyoung-Il (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Seo, Jeong-Yun (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Seo, Jeong-Ju (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, DanKook Unversity)
  • 투고 : 2018.03.10
  • 심사 : 2018.03.24
  • 발행 : 2018.03.31
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초록

본 논문에서는 기존 ESD 보호회로인 SCR, LVTSCR 보다 향상된 전기적 특성을 갖는 새로운 PNP 바이폴라 삽입형 ESD 보호회로를 제안한다. 제안된 회로는 기존 SCR에 대비하여 약 9V낮은 8.59V의 트리거 전압을 가지고, 기생 PNP가 하나 더 동작하면서 높은 감내특성을 갖는다. 또한 제안된 ESD 보호회로의 실제 설계 적용을 위해 변수 L을 늘리면서 기생 PNP의 베이스 길이를 늘려 홀딩전압을 증가시켰다. 제안된 소자의 전기적 특성 검증을 위해 Synopsys사의 T-CAD 시뮬레이터를 사용하였다.

In this paper, we propose a new PNP bipolar insertion type ESD protection circuit with improved electrical characteristics than the existing ESD protection circuits SCR and LVTSCR. The proposed circuit has 8.59V trigger voltage which is about 9V lower than that of the conventional SCR, and the parasitic PNP has one more operation and high robustness characteristics. For the practical design of the proposed ESD protection circuit, the holding voltage was increased by increasing the base length of the parasitic PNP while increasing the variable L. To verify the electrical characteristics of the proposed device, Synopsys T-CAD simulator was used.

키워드

참고문헌

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