Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition

원자층 증착법으로 증착된 MoOx를 적용한 전하 선택 접합의 이종 접합 태양전지

  • Jeong, Min Ji (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Jo, Young Joon (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Lee, Sun Hwa (College of Infomation and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Joon Shin (College of Infomation and Communication Engineering, Sungkyunkwan University) ;
  • Im, Kyung Jin (Solar R&D division, JUSUNG Engineering Co. Ltd.) ;
  • Seo, Jeong Ho (Solar R&D division, JUSUNG Engineering Co. Ltd.) ;
  • Chang, Hyo Sik (Graduate School of Energy Science and Technology, Chungnam National University)
  • Received : 2019.03.29
  • Accepted : 2019.04.25
  • Published : 2019.05.27
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Abstract

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

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References

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