Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy

MBE 법에 의해 성장된 고종횡비 InGaN 나노와이어 광촉매

  • An, Soyeon (Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Ra, Yong-Ho (Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology)
  • 안소연 (한국세라믹기술원 전자융합본부 광전자부품소재센터) ;
  • 전대우 (한국세라믹기술원 전자융합본부 광전자부품소재센터) ;
  • 황종희 (한국세라믹기술원 전자융합본부 광전자부품소재센터) ;
  • 라용호 (한국세라믹기술원 전자융합본부 광전자부품소재센터)
  • Received : 2019.07.30
  • Accepted : 2019.08.06
  • Published : 2019.08.31
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Abstract

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

우리는 분자선 에피택시(Molecular Beam Epitaxy) 법을 사용하여 광전기화학적 물분해 수소생산용 고종횡비 GaN 기반 나노와이어를 Si 기판 위에 성공적으로 제작하였다. 주사전자현미경(SEM)과 에너지분산형 분광법(EDX)은 p-GaN:Mg 및 p-InGaN 나노와이어가 고밀도와 함께 수직으로 성장 되었음을 증명하였다. 또한, p-InGaN 나노와이어의 발광 파장을 552 nm에서 590 nm까지의 조절이 가능하다는 것을 확인하였다. 이렇게 제작된 p-InGaN 나노와이어는 태양광을 통해 외부 전위 없이 물분해가 가능한 수소생산용 광촉매로써 매우 유용하게 사용될 수 있다.

Keywords

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