Journal of the Korean Society of Manufacturing Process Engineers (한국기계가공학회지)

The Korean Society of Manufacturing Process Engineers (한국기계가공학회)
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Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP

산화막 CMP에서 리테이닝 링의 인서트 재질이 연마정밀도에 미치는 영향

  • Park, Ki-Won (Department of Mechanical Engineering, Graduate School, Incheon National University) ;
  • Park, Dong-Sam (Department of Mechanical Engineering, Incheon National University)
  • 박기원 (인천대학교 대학원 기계공학과) ;
  • 박동삼 (인천대학교 기계공학과)
  • Received : 2019.05.15
  • Accepted : 2019.06.18
  • Published : 2019.08.31
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Abstract

CMP is the most critical process in the manufacture of silicon wafers, and the use of retaining rings, which are consumable parts used in CMP equipment, is increasingly important. Since the retaining ring is made of plastic, it is not only weak in strength but also has the problem of taking a long time for the flattening operation of the ring itself performed before the CMP process, and of the imbalance of force due to bolt tightening causing uneven wear. In order to solve this problem, the retaining ring and the insert ring are integrally used, and the flatness of the retaining ring may be affected depending on the material of the insert ring. Also, the residual stress generated in the manufacturing process of the insert ring may cause distortion of the ring, which may adversely affect the precision polishing. In this study, when the insert ring is made of Zn or STS304, the thickness variation and the flatness of the retaining ring are compared and, finally, the material removal rate is analyzed by polishing the wafer by the oxide CMP process. Through these experiments, the effects of the insert ring material on the polishing accuracy of the wafers were investigated.

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References

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