DOI QR코드

DOI QR Code

Practical SPICE Model for IGBT and PiN Diode Based on Finite Differential Method

  • Cao, Han (University of Chinese Academy of Sciences) ;
  • Ning, Puqi (University of Chinese Academy of Sciences) ;
  • Wen, Xuhui (University of Chinese Academy of Sciences) ;
  • Yuan, Tianshu (University of Chinese Academy of Sciences)
  • Received : 2018.12.21
  • Accepted : 2019.05.29
  • Published : 2019.11.20

Abstract

In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

Keywords

References

  1. K. Sheng, B. W. Williams, and S. J. Finney, “A review of IGBT models,” IEEE Trans. Power Electron., Vol. 15, No. 6, pp. 1250-1266, Nov. 2000. https://doi.org/10.1109/63.892840
  2. S. Castagno, R. D. Curry, and E. Loree, “Analysis and comparison of a fast turn-on series IGBT stack and high-voltage-rated commercial IGBTS,” IEEE Trans. Plasma Sci., Vol. 34, No. 5, pp. 1692-1696, Oct. 2006. https://doi.org/10.1109/TPS.2006.879551
  3. Q. Al'Akayshee, A. Sartain, A. Golland, F. Wakeman, M. Talebinejad, and A. D .C. Chan, "Press pack IGBT: High current pulse switch transcranial magnetic simulation," IET Int. Conference on Power Electronics, 2014.
  4. H. Chang, J. Bu, G. Kong, and R. Bou, "High speed 650V IGBTs for DC-DC conversion up to 200 kHz," IEEE Int. Symposium on Power Semiconductor Devices & Ics. IEEE., pp. 72-75, 2011.
  5. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device," International Electron Devices Meeting, 2005.
  6. E. S. Kim, K. Y. Joe, M. H. Kye, Y. H. Kim, and B. D. Yoon, “An improved soft-switching PWM FB DC/DC converter for reducing conduction losses,” IEEE Trans. Power Electron., Vol. 14, No. 2, pp. 258-264, Mar. 1999.
  7. J. T. Hsu and K. D. T. Ngo, “Behavioral modeling of the IGBT using the Hammerstein configuration,” IEEE Trans. Power Electron., Vol. 11, No. 6, pp. 746-754, Nov. 1996. https://doi.org/10.1109/63.542037
  8. A. R. Hefner, “An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT),” IEEE Trans. Power Electron., Vol. 5, No. 4, pp. 459-468, Oct. 1990. https://doi.org/10.1109/63.60690
  9. P. Leturcq, M. O. Berraies, and J. L. Massol, "Implementation and validation of a new diode model for circuit simulation," Pesc Record IEEE Power Electronics Specialists Conference. IEEE., pp. 35-43, 1996.
  10. A. G. M. Strollo and D. De Caro, “Low power flip-flop with clock gating on master and slave latches,” Electronics Letters., Vol. 36, No. 4, pp. 294-295, Feb. 1990.
  11. W. R. Zimmerman, “Time domain solutions to partial differential equations using SPICE,” IEEE Trans. Edu., Vol. 39, No. 4, pp. 563-573, Nov. 1996. https://doi.org/10.1109/13.545689
  12. B. Baliga, Fundamentals of Power Semiconductor Devices, Science Press, Chap. 2, 2008.
  13. R. H. Caverly and S. Khan, "Electrothermal modeling of microwave and RF PIN Diode switch and attenuator circuits," IEEE International Microwave Symposium Digest., pp. 1-4, 2013.
  14. A. Barna and D. Horelick, “A simple diode model including conductivity modulation,” IEEE Trans. Circuit Theory, Vol. 18, No. 2, pp. 233-240, Mar. 1971. https://doi.org/10.1109/TCT.1971.1083246
  15. M. J. Declercq and J. D. Plummer, “Avalanche breakdown in high-voltage D-MOS devices,” IEEE Trans. Electron. Dev., Vol. 23, No. 1, pp. 1-4, Jan. 1976. https://doi.org/10.1109/T-ED.1976.18337
  16. A. R. Hefner, "Device models, circuit simulation, and computer-controlled measurements for the IGBT," IEEE Workshop on Computers in Power Electronics., pp. 5-7, 1990.
  17. Y. Teng, J. Tan, Q. Yu, and Y. Zhu, "Analysis of the negative Miller capacitance during switching transients of IGBTs," Tencon IEEE Region 10 Conference., pp. 1-4, 2015.
  18. J. Boehmer, J. Schumann, and H. G. Eckel, "Effect of the miller-capacitance during switching transients of IGBT and MOSFET," Power Electronics & Motion Control Conference, IEEE., pp. LS6d.3-1 - LS6d.3-5, 2012.
  19. A. R. Hefner and D. L. Blackburn, “An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor,” Solid State Electronics., Vol. 31, No. 10, pp. 1513-1532, Oct. 1988. https://doi.org/10.1016/0038-1101(88)90025-1
  20. A. Erfani, M. Muhammadi, S. Asgari Neshat, M. M. Shalchi, and F. Varaminian, "Investigation of aluminum primary batteries based on taguchi method," Energy Technology & Policy., pp. 19-27, 2015.