Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Hexafluoroisopropanol Addition on Dry Etching of Cu Thin Films Using Organic Material

유기 물질을 사용한 구리박막의 건식 식각에 대한 헥사플루오로이소프로판올 첨가의 영향

  • Park, Sung Yong (Department of Chemical Engineering, Inha University) ;
  • Lim, Eun Teak (Department of Chemical Engineering, Inha University) ;
  • Cha, Moon Hwan (Department of Chemical Engineering, Inha University) ;
  • Lee, Ji Soo (Department of Chemical Engineering, Inha University) ;
  • Chung, Chee Won (Department of Chemical Engineering, Inha University)
  • 박성용 (인하대학교 화학공학과) ;
  • 임은택 (인하대학교 화학공학과) ;
  • 차문환 (인하대학교 화학공학과) ;
  • 이지수 (인하대학교 화학공학과) ;
  • 정지원 (인하대학교 화학공학과)
  • Received : 2021.02.14
  • Accepted : 2021.03.11
  • Published : 2021.03.27
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Abstract

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

Keywords

References

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