The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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A New Gate Driver Technique for Voltage Balancing in Series-Connected Switching Devices

직렬 연결된 SiC MOSFET의 전압 평형을 위한 새로운 능동 게이트 구동 기법

  • Received : 2020.05.22
  • Accepted : 2020.08.03
  • Published : 2022.02.20
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Abstract

The series-connected semiconductor devices structure is one way to achieve a high voltage rating. However, a problem with voltage imbalance exists in which different voltages are applied to the series-connected switches. This paper proposed a new voltage balancing technique that controls the turn-off delay time of the switch by adding one bipolar junction transistor to the gate turn-off path. The validity of the proposed method is proved through simulation and experiment. The proposed active gate driver not only enables voltage balancing across a variety of current ranges but also has a greater voltage balancing performance compared with conventional RC snubber methods.

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Acknowledgement

본 연구는 2021년도 산업통상자원부의 재원으로 한국에너지기술평가원(KETEP)의 에너지인력양성사업으로 지원받아 수행한 인력양성 성과입니다. (No. 20194030202370) 본 연구는 2021년도 한국전력공사 전력연구원의 지원을 받아 수행한 "배전망 DMO(Distribution Market Operator) 플랫폼 및 전력시장 연구"의 지원을 받아 수행한 연구과제입니다. (No. R19XO02-03)

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