Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Investigation of Etching Characteristics for Powered Edge-Ring Utilizing PI-VM in Capacitively Coupled Argon/SF6/O2 Plasma

PI-VM을 이용한 용량 결합 Ar/SF6/O2 플라즈마에서의 전력 인가 에지 링 식각 특성 조사

  • Hyunju Lee (Department of Energy Systems Engineering, Seoul National University) ;
  • Jaemin Song (Department of Energy Systems Engineering, Seoul National University) ;
  • Taejun Park (Department of Energy Systems Engineering, Seoul National University) ;
  • Nam-Kyun Kim (Mechatronics R&D Center, Samsung Electronics Co., Ltd.) ;
  • Gon-Ho Kim (Department of Energy Systems Engineering, Seoul National University)
  • 이현주 (서울대학교 에너지시스템공학부) ;
  • 송재민 (서울대학교 에너지시스템공학부) ;
  • 박태준 (서울대학교 에너지시스템공학부) ;
  • 김남균 (삼성전자 설비기술연구소) ;
  • 김곤호 (서울대학교 에너지시스템공학부)
  • Received : 2023.10.19
  • Accepted : 2023.12.12
  • Published : 2023.12.31
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Abstract

The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO2 hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

Keywords

Acknowledgement

이 논문은 2 02 0년 정부(과학기술정보통신부)의 재원으로 국가기술연구회 2 02 0년도 미래선도형 융합연구단 사업 (No. CRC-20-01-NFRI) 및 BK2 1플러스 사업 (No. 4199990314119) 및 삼성전자 산학협력과제의 지원을 받아 수행된 연구임.

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