A new oscillator configuration is presented and tested for Josephson voltage standard operated at the cryogenic(4.2K) temperature. Features of active devices are investigated in aspects of 1/f noise, output power, and current collapse at low temperature. The output power of oscillator is optimized by a nonlinear design approach called Harmonic Two Signal Method(HTSM). The embedding newworks of the generalized six oscillators with tow loads are derived. A HEMT oscilliator is designed in X-Band for the Josephson voltage standard and tested at room and cryogenic(4.2K) temperatures. Oscillation frequency, output power, C/N ratio, and fequency stability are compared at room and low temperatures.

Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

In our paper is reported a new 3D(dimensional) trajectory split approach with greatly improved efficiency for the Monte Carlo simulation of the 3D profiles of implanted ionand point defect concentrations in single-crystal silicon. This approach has been successfully implemented in our TRICSI Monte Carlo code. Combined with the previously developed model for damage accumalation in our TRICSI code, this model allows phasically based dynamic simulation of 3D profiles over an subsequent process simulation such as diffusion modeling and simulation. A typical time saving of over 10 timeshas been achieved for 3D simulation. Our method ensures much better region aground the implanted area. For 1-D simulation, the optimized condition for trajectory split has set to 3,000 pseudoparticles with 2 split branches.

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

One of the key components to accomplish WDM all-optical network is an arrayed waveguide grating router. The spectral characterisitc of the ypeical arrayed waveguide grating rouger has parabolic shape, hence the bandwidth is limited. The spectral response of an optical filter should be as flat as possible for the reliable operation of the syste, because the center frequency of the optical source could be deviated in the actual system. In order to acquire these characteristics, we propose and design a new type of the arrayed waveguide grating router with a flat passband using the Fourier optics concept. The BPM simulation results of the new arrayed waveguide grating router with the flat passband show that the bandwideth is 0.8 nm at -1 dB, instertion loss about 6 dB, and the crosstalk less than -23 dB fro each cnannel, which is 1.6 nm(200 GHz) separated from the adjacent channel around 1550 nm wavelength range.

In this paper, a new input method is proposed to improve shift-invariant property of a photorefractive correlator andwe implemented real-time optical pattern recognition system using it. In the conventional photorefractive correlator, it is vrey difficult to satisfy the Bragg condition in the pattern recognition process. So, correlation peak is decreased heavily for the shift of input image. If a liquid crystal television(LCTV) without an anlyzer is used as input device, we can get the correlation result regardless of shift of input image because beam path is not changed during storage of holographic filter and correlation process. Also recording time of a holographic matched filter in photorefractive crystal is reduced and the correlation peak is increased because incident beam on the LCTV is transmitted completely. Therefore total optical efficiency is improved. We compared and analyzed the correlation results of proposed photorefractive correlator by computer simulation and optical experiment. We used a BaTiO$_{3}$ single crystal which has high diffraction efficiency in optical experiment.

Fiber-Fabry-Perot (FFP) tunable filters, the essential component of WDM transmission, were designed, fabricated and characterized. Multi-layered thin film mirrors that consists of an optical collimater's corss section as a substrate and TiO$_{2}$SiO$_{2}$ alternating multi-layered films as a filter wer designed by means of the transfer matrix method. Fabricated mirrors showed the high reflectivity over around 98% as expected. After fabricating the tuneable filters using PZT, we measured FSR, FWHM, finesse , crosstalk and insertion loss, confirming that the built devices satisfied the optical filter's specifications required in the SEDM transmission systems.

A hit-miss transform(HMT) using synthetic structuring elements(SE's) for optical recognition of a moving target is proposed. A moving target which was obtained from a fixed view point has objects. In proposed HMT, SE's are synthesized by using SDF(synthetic discriminant function) algorithm for efficient recognitionof various shapes of true class objects in noisy and cluttered scene. The synthetic hit SE and the synthetic miss SE are composed of SDF of hit SE's and miss SE's for each true class object. Simulation results show the proposed method can be used for the recognition of various shapes of the true class with one one HMT operation.

In a LiNbO$_{3}$ crystal, optical noise is caused by the inhomogeneity of crystal inside if the excess energy is incident on the crystal. In this paper, we experiemnt the influence of optical noise when it is applied for beam diffraction and optical information storage. And it is proposed the energy threshold level which is not affected by optical noise in Fe-LiNbO$_{3}$ crystal(0.02Wt.% doped, 10mm*10mm*10mm). The optical noise of crystal weremeasured as a function of the incident beam intensity(10mw, 5mw, 1mw, 0.5mw), direction in incident(orthogonal, left rotation, right rotation) and wavelength(514.5nm, 632.8nm).