• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.944-949
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• 2015

This study proposed a patch antenna with a MIMO structure which is applicable for wireless communication equipment by combining a single patch antenna with a multi port. The proposed MIMO patch antenna was designed through the TRF-45 substrate with a relative permittivity of 4.5, loss tangent equal to 0.0035 and dielectric high of 1.6 mm, and the center frequency of the antenna was 2.45 GHz in the ISM (Industrial Scientific and Medical) band. The proposed MIMO patch antenna had a 500 MHz bandwidth from 2.16 ~ 2.66 GHz and 24.1% fractional bandwidth. The return loss and VSWR were -62.05 dB, 1.01 at the ISM bandwidth of 2.45 GHz. The Wibro band of 2.3 GHz was -17.43 dB, 1.33, the WiFi band of 2.4 GHz was -31.89 dB, 1.05, and the WiMax band of 2.5 GHz was -36.47 dB, 1.03. The radiation patterns included in the bandwidth were directional, and the WiBro band of 2.3 GHzhad a gain of 4.22 dBi, the WiFi band of 2.4 GHz had a gain of 4.12 dBi, the ISM band of 2.45 GHz had a gain of 4.06dBi, and the WiMax band of 2.5 GHz had a gain of 3.9 6dBi.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.938-943
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• 2015

The proposed circular patch antenna was designed to include relative bandwidth of above 25% as designed by the FCC in the FCC in the 3.1 ~ 10.6 GHz band. The antenna was induced to have a wide band characteristic through two structures of the usual microstrip line and a microstrip line with a linear change in impedance. The proposed finally antenna was designed using an FR4_epoxy substrate with 4.7% permittivity, 0.02 of loss tangent, and 1.6 mm of thickness, and was simulated with the use of HFSS made by Ansys. Return loss at frequency, VSWR, radiation pattern and the gain of the antenna were analysed. As a result, if satisfied a return loss of -10 dB and $VSWR{\leq}2$ from 2.28 ~ 13.35 GHz, showing about the bandwidth of 11.89 GHz, and the radiation pattern was unidirectional in all bands. The antenna gain gradually increased from 2 ~ 8 GHz and had the highest gain of 7.92 dBi at 8 GHz. and the gain gradually decreased in the 9 ~ 12 GHz band.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.131-137
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• 2004

For the aim of thin electromagnetic wave absorbers used in mobile telecommunication frequency band (0.8-2.0㎓), we investigate high-frequency magnetic, dielectric and microwave absorbing properties of iron particles dispersed in rubber matrix in this study. The major experimental variables are particle shape (sphere and flake) and initial particle size (in the range 5-70 $\mu\textrm{m}$) of iron powders. High value of magnetic permeability and dielectric permittivity can be obtained in the composites containing thin plate-shape (flake) iron particles (of which thickness is less than skin depth in ㎓frequency), which can be produced by mechanical forging of spherical iron powders using an attrition mill. This result is attributed to the reduction of eddy current loss (increase of permeability) and the increase of space charge polarization (increase of permeability). The optimum initial particle size is found to be about 10 $\mu\textrm{m}$ for the attainment of the material parameters (particularly, real part of complex permeability) satisfying the wave impedance matching. With the iron powders controlled in size and shape as absorbent fillers in rubber matrix, the thickness can be reduced to about 0.7mm with respect to -5㏈ reflection loss (70% power absorption) in mobile telecommunication frequency band.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.102-110
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• 2005

Piezoelectric transformers(PT) are expected to be small, thin and highly efficient, and which are attractive as a transformer with high power density for step down voltage. For these reasons, we have attempted to develop a step-down PT for the miniaturized adaptor. We propose a PT, operating in thickness extensional vibration mode for step-down voltage. This PT consists of a multi-layered construction in the thickness direction. In order to develop the step-down PT of 10 W class and turn ratio of 0.1 with high efficiency and miniaturization, the piezoelectric ceramics and PT designs are estimated with a variety of characteristics. The basic composition of piezoelectric ceramics consists of ternary yPb(Zr$_{x}$Ti$_{1-x}$)O$_{3}$-(1-y)Pb(Mn$_{1/3}$Nb1$_{1/3}$Sb$_{1/3}$)O$_{3}$. In the piezoelectric characteristics evaluations, at y=0.95 and x=0.505, the electromechanical coupling factor(K$_{p}$) is 58$\%$, piezoelectric strain constant(d$_{33}$) is 270 pC/N, mechanical quality factor(Qr$_{m}$) is 1520, permittivity($\varepsilon$/ 0) is 1500, and Curie temperature is 350 $^{\circ}C$. At y = 0.90 and x = 0.500, kp is 56$\%$, d33 is 250 pC/N, Q$_{m}$ is 1820, $\varepsilon$$_{33}$$^{T}$/$\varepsilon$$_{0}$ is 1120, and Curie temperature is 290 $^{\circ}C$. It shows the excellent properties at morphotropic phase boundary regions. PZT-PMNS ceramic may be available for high power piezoelectric devices such as PTs. The design of step-down PTs for adaptor proposes a multi-layer structure to overcome some structural defects of conventional PTs. In order to design PTs and analyze their performances, the finite element analysis and equivalent circuit analysis method are applied. The maximum peak of gain G as a first mode for thickness extensional vibration occurs near 0.85 MHz at load resistance of 10 .The peak of second mode at 1.7 MHz is 0.12 and the efficiency is 92$\%$.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1067-1072
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• 2003

The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.643-648
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• 2014

The accelerated thermal aging of CSPE (chlorosulfonated polyethylene) was carried out for 40.41, 121.22, and 202.04 days at $100^{\circ}C$, which are equivalent to 20, 60, and 100years of aging at $50^{\circ}C$, respectively. The volume electrical resistivities of the accelerated thermally aged CSPE samples for 0, 40.41, 121.22, and 202.04 days were $1.107{\times}10^{14}-2.097{\times}10^{14}$, $7.752{\times}10^{13}-1.556{\times}10^{14}$, $7.693{\times}10^{13}-1.521{\times}10^{14}$, and $7.380{\times}10^{13}-1.304{\times}10^{14}{\Omega}{\cdot}cm$, respectively, at room temperature. The permittivities of the accelerated thermally aged CSPE samples for 0, 40.41, 121.22, and 202.04 days were $2.89{\times}10^{-11}-3.65{\times}10^{-11}$, $3.40{\times}10^{-11}-3.70{\times}10^{-11}$, $3.50{\times}10^{-11}-3.82{\times}10^{-11}$, and $3.76{\times}10^{-11}-4.13{\times}10^{-11}$ F/m, respectively, at room temperature. The EAB (elongation at break) of the accelerated thermally aged CSPE samples for 0, 40.41, 121.22, and 202.04 days were 98.8-101.3, 59.5-60.3, 37.8-39.2, and 41.8-44.3%, respectively, at room temperature. The apparent densities of the accelerated thermally aged CSPE samples for 0, 40.41, 121.22, and 202.04 days were 1.603-1.614, 1.611-1.613, 1.622-1.628, and $1.618-1.620g/cm^3$, respectively, at room temperature. The measured currents of the accelerated thermally aged CSPE and the standard sample were almost constant after 5 min of applying a 300-V/mm electric field to the CSPE. The V-I slope of the accelerated thermally aged CSPE sample was increased if the applied electric field was increased at room temperature, and the V-I slope of the accelerated thermally aged CSPE was higher than that of standard CSPE.

• Journal of Navigation and Port Research
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• v.34 no.1
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• pp.15-19
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• 2010

Recently, the wireless LAN system is rapidly growing because of its convenience of high speed communication. However, the wireless LAN systems at indoor places occur multi-propagation path by reflected waves from walls, ceilings, floors, and desks. Multipath problems cause transmission errors and degradation of communication speed. These problems can be solved by using EM wave absorbers. In this paper, we analyzed property of Graphite and derived the optimum ratio of Graphite: CPE to develop EM wave absorber for the wireless LAN system. First, we fabricated several samples in different composition ratios of Graphite and CPE, and then measured the reflection coefficient of each samples. Material constants of permittivity and permeability were calculated using the measured data and designed EM wave absorber. Secondly, the EM wave absorber was fabricated and tested on the base of the simulation data. As a result, it showed that the EM wave absorber in 1.7 mm thickness with the ratio of Graphite: CPE=50:50 wt.% has excellent absorption ability more than 27 dB at 5.2 GHz.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1234-1239
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• 1999

Electromagnetic wave asorbing properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$, where X was replaced by substitution elements Cu, Mg, Mn, have been studied. The structure, shape, size and magnetic properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were analyzed by XRD, SEM, VSM. The relative complex permittivity, permeability, and electromagnetic wave absorbing properties were measured by Network Analyzer. The structure, shape, size and magnetization value of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were found to be similar in spite of substitution elements. The coercive force and hysteresis-loss showed maximum value when Mg was substituted for X. The dielectric loss(${\varepsilon}_r"/{\varepsilon}_r'$) was found to be maximum value when Mn was substituted for X. Also the magnetic loss(${\mu}_r"/{\mu}_r'$} was found to be maximum with Cu substitution. The electromagnetica wave absorbing property of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 4mm thickness was excellent as over - 40dB at 9GHz, and the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 8mm thickness was over-40dB at 2GHz. Those composites also showed superior microwave absorbing properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.301-313
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• 2021

Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.