• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.127-130
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• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• Laser Solutions
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• v.5 no.2
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• pp.31-38
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• 2002

This paper describes the process of nanoparticle synthesis by laser ablation of consolidated microparticles. We have generated nanoparticles by high-power pulsed laser ablation of Al, Cu and Ag microparticles using a Q-switched Nd:YAG laser (wavelength 355 nm, FWHM 5 ㎱, fluence 0.8∼2.0 J/㎠). Microparticles of mean diameter 18∼80 ㎛ are ablated in the ambient air The generated nanoparticles are collected on a glass substrate and the size distribution and morphology are examined using a scanning electron microscope and a transmission electron microscope. The effect of laser fluence and collector position on the distribution of particle size is investigated. The dynamics of ablation plume and shock wave is analyzed by monitoring the photoacoustic probe-beam deflection signal. Nanosecond time-resolved images of the ablation process are also obtained by laser flash shadowgraphy. Based on the experimental results, discussions are made on the dynamics of ablation plume.

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.268-270
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• 2000

• Korean Journal of Optics and Photonics
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• v.6 no.1
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• pp.56-61
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• 1995

본 연구에서는 펄스형 고반복 Nd:YAG 레이저를 이용한 거리측정기의 설계 및 그에 따른 제작 성능을 기술하고자 한다. 제작 결과로 얻어진 측정 최대거리는 지상표적에 대하여 약 19km이다. 이 때 대기의 시정거리는 약 23km이다.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.66-73
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• 2007

The various output characteristics of a pulsed Ti:sapphire laser oscillator with a plane-parallel resonator, pumped longitudinally by the second harmonic wave of a Nd:YAG laser, and the output of a Ti:sapphire laser amplifier operated along the single path of the oscillator beam were investigated and analyzed. In the case of the oscillator, we measured the spectrum, the pulse buildup time, the temporal duration time of the pulse, and the output energy according to the variation of the pumping energy, resonator length, and the reflectance of the output coupler. And, in the case of the amplifier, we investigated and analyzed the output energy of the amplifier as a function of the time difference between the two pump beams of the oscillator and the amplifier, the pumping energy of the oscillator, and the pumping energy of the amplifier When pump energies of both the oscillator and the amplifier were 18 mJ/pulse, we could find that the output energy of the amplifier increased linearly and gradually up to the time difference of 35 ns. Finally, we determined that the slope efficiencies of the oscillator and the amplifier were 23.5 % and 11.6 %, respectively.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2201-2203
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• 1999

In this study, we have designed and manufactured not a present elliptic cavity but a circular cavity and we have experimented the operational characteristics. As a result, we obtained the maximum efficiency of 2.1 %. It didn't have any difference compared with elliptic cavity. A circular cavity is much more compact, so far easier to be manufactured than a elliptic cavity. And it can be made at a low cost. At the input energy, parameter $\alpha$, input voltage, and pulse width were in the same condition, we have decided to the optimization of the mesh number of a parallel-mesh circuit which was connected with main power supply.