• Title/Summary/Keyword: ZnGa_2O_4$:Mn

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Effect of Luminescence with Coactivator of $ZnGa_2O_4$:Mn,X phosphor ($ZnGa_2O_4$:Mn,X 형광체의 부활성제에 따른 발광 효과)

  • 박용규;한정인;주성후
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.3
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    • pp.242-247
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    • 1998
  • In this study, we have synthesized $ZnGa_2O_4$:Mn,X powder doped with Mn, MnO, $MnF_2$ and $MnCl_2$, low voltage green emitting phosphor, in vacuum atmosphere. From PL spectra, the intensity of the emission peak, the brightness with coactivator show that $ZnGa_2O_4$:Mn,Cl > $ZnGa_2O_4$:Mn,F > $ZnGa_2O_4$:Mn,O > $ZnGa_2O_4$:Mn. These improvement of the brightness are caused by the increase of the concentration of $Mn^{2+}$ ion. In case of $ZnGa_2O_4$:Mn,Cl and ZnGa$_2$O$_4$:Mn,F, the brightness is enhanced much more, which is owed to the decrease of defect of host material. For $ZnGa_2O_4$:Mn,Cl phosphor fabricated with optimized condition, the decay time becomes short from 30 ms of the $ZnGa_2O_4$:Mn and $ZnGa_2O_4$:Mn,O to 6 ms and the brightness of CL at 1 kV, 1 mA is 60 cd/$m^2$.

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Preparation and Photoluminescence of Mn-Doped $ZnGa_2O_4$ Phosphors (Mn 도핑한 $ZnGa_2O_4$ 형광체의 제조 및 빛발광 특성)

  • 류호진;박희동
    • Journal of the Korean Ceramic Society
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    • v.33 no.5
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    • pp.531-535
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    • 1996
  • ZnGa2O4 and Mn-doped ZnGa2O4 were synthesized using the state reaction method to investigate their photoluminescence characteristics depending on Mn concentration. Under 254nm excitation, ZnGa2O4 exhibited a broad-band emission extending from 330 nm to 610 nm peaking at 450nm. On the other hand Mn-doped ZnGa2O4 showed a new strong narrow-band emission peaking at 504 nm and maximum intensity at the doping concentration of 0.006 mole Mn.

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A Study on Phosphor Synthetic and Low Temperature Photoluminescence Spectrum (저온 photoluminescence 스펙트럼 및 형광체 합성에 관한 연구)

  • Kim, Soo-Yong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.4
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    • pp.10-16
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    • 2010
  • In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

A study on luminescence a specific character and ZnGa2O4:Mn phosphor synthetic (ZnGa2O4:Mn 형광체 합성 및 발광 특성에 관한 연구)

  • Kim, Soo Yong;Jee, Suk Kun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.05a
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    • pp.703-708
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    • 2009
  • In this paper, synthesis here Mn add to Ar any a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1:1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum, the surface a picture and a component ratio measurement, also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

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Photoluminescence of ZnGa2O4-xMx:Mn2+ (M=S, Se) Thin Films

  • Yi, Soung-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.13-16
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    • 2003
  • Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

Preparation and Luminescent Properties of Zn2SiO4:Mn, Ga Phosphors (Zn2SiO\4:Mn, Ga 형광체의 제조와 발광특성)

  • Lee, Ji-Young;Yu, Yun-Sik;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.2
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    • pp.158-162
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    • 2009
  • $Zn_2SiO_4$:Mn green phosphors doped with Ga for PDP were synthesized by solid state reaction method. Photoluminescence measurements showed a new emission peak at around 600 nm for $Zn_2SiO_4$:Mn phosphors doped with Ga. Also, the luminescent color with doping $Ga^{3+}$ in the $Zn_2SiO_4$:Mn phosphors changed to green from yellowish green. Consequently, the new peak and charge of the luminescent color in the $Zn_2SiO_4$:Mn, Ga phosphors were attributed to $^2E{\rightarrow}^6A_2$ transition of $Mn^{4+}$.

The luminescent characteristics of Al codoped $ZnGa_2$$O_4$:Mn phosphors (Al이 첨가된$ZnGa_2$$O_4$:Mn 형광체의 발광특성)

  • 박용규;한정인;곽민기;한종근;주성후
    • Electrical & Electronic Materials
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    • v.10 no.1
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    • pp.33-38
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    • 1997
  • The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

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A Study on the Cathodoluminescence and Structure of Thin Film $ZnGa_2O_4:Mn$ Oxide Phosphor (박막형 $ZnGa_2O_4:Mn$ 산화물 형광체의 음극선루미느센스와 구조적 특성에 관한 연구)

  • Kim, Joo-Han;Holloway Paul H.
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.541-546
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    • 2006
  • In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.

Effect of oxygen defects on luminescent characteristics of ZnGa_2O_4$:Mn phosphors (산소 결함이 ZnGa_2O_4$:Mn형광체 발광 특성에 미치는 효과)

  • 박용규;한정인;곽민기;한종근;주성후
    • Electrical & Electronic Materials
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    • v.9 no.10
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    • pp.1040-1046
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    • 1996
  • Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

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Preparation and EPR Characteristics of $ZnGa_2O_4$ : Mn Phosphor

  • 정하균;박도순;박윤창
    • Bulletin of the Korean Chemical Society
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    • v.19 no.12
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    • pp.1320-1325
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    • 1998
  • ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.