• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.23-29
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• 2010

This paper presents a method for constructing a memory system using defective memory chips comprising faulty storage blocks. The three-dimensional memory system introduced here employs a die-stacked structure of faulty memory chips. Signals lines passing through the through-silicon-vias (TSVs) connect chips in the defect tolerant structure. Defective chips are classified into several groups each group comprising defective chips having faulty blocks at the same location. A defect tolerant memory system is constructed using chips from different groups. Defect-free storage blocks from spare chips replace faulty blocks using additional routing circuitry. The number of spare chips for defect tolerance is $s={\ulcorner}(k{\times}n)/(m-k){\urcorner}$ to make a system defect tolerant for (n+s) chips with k faulty blocks among m independently addressable blocks.

• Journal of the Korea Society for Simulation
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• v.18 no.4
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• pp.59-66
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• 2009

This has been possible by integration techniques such as very large scale integration (VLSI) and wafer scale integration (WSI). Redundancy has been extensively used for manufacturing memory chips and to provide repair of these devices in the presence of faulty cells. If there are too many defects, the momory has to be rejected. But if there are a few defects, it will be more efficient and cost reducing for the company to use it by repairing. Therefore, laser-repair process is nedded for such a reason and redundancy analysis is needed to establish correct target of laser-repair process. The proposed CRA (Correlation Repair Algorithm) simulation, beyond the idea of the conventional redundancy analysis algorithm, aims at reducing the time spent in the process and strengthening cost competitiveness by performing redundancy analysis after simulating each case of defect.