• 제목/요약/키워드: through-thickness hole

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원통이 붙은 평판의 응력집중완화에 대한 연구 (A Study on the Reducing of the Stress Concentration Near a Circular Hole in a Flat Plate Attached to a Cylinder)

  • 정인승
    • 한국정밀공학회지
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    • 제11권5호
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    • pp.98-109
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    • 1994
  • This paper is studied on the junction stress of the large tank and the cylindrical outlet such as a pressure vessel attached to a pope or nozzle theoretically. It is assumed that the diameter of tank is much larger than that of the nozzle cylinder, so it can be approximated that nozzle cylinder is attached to plate. As the current nozzle shape is manufactured as "Through Type" to reduce the stress concentration around the nozzle junction part of pressure vessel, a theoretical analysis on the cylinder with finite length should be performed to accomodate this fact. Each theoretical optimal values were obtained through the analysis of stress concentration caused by the variation of cylinder length and thickness, and these results were estimated by performing FEM Analysis. Analysis.

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Study of the Effects of the Antisite Related Defects in Silicon Dioxide of Metal-Oxide-Semiconductor Structure on the Gate Leakage Current

  • Mao, Ling-Feng;Wang, Zi-Ou;Xu, Ming-Zhen;Tan, Chang-Hua
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권2호
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    • pp.164-169
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    • 2008
  • The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

다지형 압출펀치의 상대이동 속도 차이에 의한 금속 곡관의 열간금속 압출굽힘가공에 관한 연구 (A Study on the Bending Process for the Curved Tube by Hot Metal Extrusion Machine with the Multiple Punches Moving in the Different Velocity)

  • 박대윤;진인태
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 춘계학술대회 논문집
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    • pp.102-105
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    • 2001
  • The bending process for the curved tube can be developed by the hot metal extrusion machine with the multiple punches moving in the different velocity. The bending phenomenon has been studied to be occurred by the different of velocity at the die extrusion. The difference of velocity at the die exit section can be obtained by the different velocity of billets through the multi-hole container and by the welding of billets inside the porthole die chamber. The multiple billets are moving differently by the multiple extrusion punches controlled by PLC with the servo mechanism units. The results of the experiments show that the curved tube can be bended by the extrusion process and that the defects such as the distortion of section and the thickness change of thick tube, tile folding and wrinkling of thin tube can not be shown after the bending processing by the extrusion bending machine.

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A Trapping Behavior of GaN on Diamond HEMTs for Next Generation 5G Base Station and SSPA Radar Application

  • Lee, Won Sang;Kim, John;Lee, Kyung-Won;Jin, Hyung-Suk;Kim, Sang-Keun;Kang, Youn-Duk;Na, Hyung-Gi
    • International Journal of Internet, Broadcasting and Communication
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    • 제12권2호
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    • pp.30-36
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    • 2020
  • We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

상용 간접구의 규격과 품질균일성에 대한 조사 (Research about Spec and Uniformity of Commercial Indirect Moxibustion)

  • 권오상;이상훈;조성진;최광호;연선희;이새봄;최선미;류연희
    • Korean Journal of Acupuncture
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    • 제28권3호
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    • pp.53-62
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    • 2011
  • Objectives : Burn is most common adverse events of moxibustion. Various kinds of components influence on the heat stimulation of commercial indirect moxa, but there are not enough investigation about the status. The purpose of this study is to investigate the 6 components to build a base data that is currently available to build a standard of an indirect moxibustion. Methods : The length and weight, density, thickness of the paper disk, diameter of the paper disk, and diameter in the paper disk hole were measured against 6 kinds of commercial indirect cautery. Results : 1. 'Seoam', 'Kihwang' and 'Taegeuk' shows uniform length than the other brands. 2. 'Dongbang', 'Kihwang' and 'Taegeuk' shows uniform weight than the other brands. 3. 'Dongbang', 'Kihwang' and 'Taegeuk' shows uniform density than the other brands. 4. 'Dongbang' and 'Kihwang' shows uniform thickness than the other brands. 5. 'Seoam', 'Dongbang' and 'Taegeuk' shows uniform diameter of disc hole than the other brands. Conclusions : As a result of investigation, 'Dongbang' and 'Kiwhang' indirect moxibustion was identified as a uniform product. This results are considered as an important base materials of the KS through commercial indirect moxibustion.

다공관 소음기의 투과손실에 관한 실험적 연구 (An Experimental Study on the Transmission Loss of Perforated Tube Mufflers)

  • 김찬묵;사종성;방극호
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.346-352
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    • 2002
  • This paper is the experimental study to estimate the influence of various design parameters on the performance of mufflers with perforated tubes and through-flow partitions. Muffler types considered in the present work include through-flow chamber, through-flow chamber with partition, and cross-flow chamber. The influences of the design parameters on the performance of the mufflers can be outlined as follows. In the case of the through-f]ow type mufflers, increasing the tube thickness and the hole diameter of the perforated tubes does not change the maximum value of the transmission loss but decrease the cutoff frequency. In the case of the through-flow with partitions type mufflers, it is shown that combining a fe w short chambers and long chambers can modify the frequency locations of the resonance frequencies to optimize the performance of the mufflers. For the case of the cross-flow type mufflers, it is shown that the transmission loss of the mufflers is mainly affected by the lower porosity when the porosities are different in both sides of the plug. Overall, it is shown that performance of the through-flow type with partition type mufflers is excellent in the lower frequency region, where the cross-flow type mufflers have better performance in the higher frequency region.

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3D Textile 프리폼 제조 및 복합재료 기계적 특성 연구 (Manufacture of 3D Textile Preform and Study on Mechanical Properties of Composites)

  • 조광훈;;김현우;이정운;한중원;변준형;조치룡
    • Composites Research
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    • 제32권1호
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    • pp.65-70
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    • 2019
  • 항공기 복합재료 날개 구조는 대부분 접착 혹은 패스너로 체결되어 있는데, 이러한 적층 구조 복합재료는 층간 강도가 취약하여 층간 분리가 일어나기 쉽다. 이러한 적층 복합재료의 단점을 보완하기 위해 두께 방향의 섬유를 보강한 3차원 직조형 복합재료를 통하여 강도, 손상 내구성, 충격 및 피로 하중을 향상시킬 수 있다. 또한, 자동화된 직조 공정에 의하여 단일 구조 near-net-shape의 프리폼 제조가 가능하기 때문에 공정 단축, 체결 부품 감소로 복합재료 전체 가격을 절감할 수 있다. 따라서 본 연구에서는 3차원 직조형 복합재료의 항공기 구조물 적용 가능성을 확인하기 위하여 3차원 프리폼의 기본적인 구조인 orthogonal(ORT), layer-to-layer(LTL), through-the-thickness(TTT) 패턴을 직조하고 이를 복합재료로 성형하여 압축 시험, 인장 시험, Open-hole 인장 시험을 하였다. 이 중 orthogonal 직조 복합재료가 인장 및 압축 탄성계수와 강도 모두 가장 높았으며 노치 민감도에서도 orthogonal 복합재료가 일방향 적층복합재료나 패브릭 적층 복합재료에 비하여 가장 우수한 특성을 보였다.

Finite-element analysis and design of aluminum alloy RHSs and SHSs with through-openings in bending

  • Ran Feng;Tao Yang;Zhenming Chen;Krishanu Roy;Boshan Chen;James B.P. Lim
    • Steel and Composite Structures
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    • 제46권3호
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    • pp.353-366
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    • 2023
  • This paper presents a finite-element analysis (FEA) of aluminum alloy rectangular hollow sections (RHSs) and square hollow sections (SHSs) with circular through-openings under three-point and four-point bending. First, a finite-element model (FEM) was developed and validated against the corresponding test results available in the literature. Next, using the validated FE models, a parametric study comprising 180 FE models was conducted. The cross-section width-to-thickness ratio (b/t) ranged from 2 to 5, the hole size ratio (d/h) ranged from 0.2 to 0.8 and the quantity of holes (n) ranged from 2 to 6, respectively. Third, results obtained from laboratory test and FEA were compared with current design strengths calculated in accordance with the North American Specifications (NAS), the modified direct strength method (DSM) and the modified Continuous strength method (CSM). The comparison shows that the modified CSM are conservative by 15% on average for aluminum alloy RHSs and SHSs with circular through-openings subject to bending. Finally, a new design equation is proposed based on the modified CSM after being validated with results obtained from laboratory test and FEA. The proposed design equation can provide accurate predictions of flexural capacities for aluminum alloy RHSs and SHSs with circular through-openings.

Speedy Two-Step Thermal Evaporation Process for Gold Electrode in a Perovskite Solar Cell

  • Kim, Kwangbae;Park, Taeyeul;Song, Ohsung
    • 한국재료학회지
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    • 제28권4호
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    • pp.235-240
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    • 2018
  • We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

TCO-Iess 구조 염료 태양전지의 제작과 광전변환 특성 (Synthesis of TCO-Iess Dye Sensitized Solar Cell)

  • 허종현;박선희;곽동주;성열문;송재은
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2009년도 추계학술대회 논문집
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    • pp.251-254
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    • 2009
  • A new type of dye-sensitized solar cells(DSCs) based on Ti-mesh electrode without using TCO layer is fabricated for high-efficient and low-cost solar cell application. The TCO-Iess DSCs sample is composed of a [glass/ dye sensitized $TiO_2$ layer/ Ti-mesh electrode/ electrolyte/ metal counter electrode]. The Ti-mesh electrode with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3{^-}$ through the mesh hole. Thin Ti-mesh (${\sim}40{\mu}m$ in thickness) electrode material is processed using rapid prototype method. Electrical performance of as-fabricated DSCs is presented and discussed in detail.

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