대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.433-435
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- 1987
REOXIDATION법을 이용한 Si WAFER의 HOLE TRAP의 제거
Elimination of Hole Traps on Si Wafer using Reoxidation method
- Hong, Soon-Kwan (Dept. of Electronics, Seoul City Univ.) ;
-
Ju, Byeong-Kwon
(Dept. of Electronics, Seoul City Univ.)
;
- Kim, Chul-Ju (Dept. of Electronics, Seoul City Univ.)
- 발행 : 1987.07.03
초록
Thermal reoxidation was carried out to eliminate hole traps at the surface of Si wafer. As the result, the good surface state of wafer was obtained and hole traps were eliminate at the inversion layer. For the evaluation of reoxidation effects. MOS diode was fabricated and its C-Y curve was plotted.
키워드