Mega Bit DRAM Capacitor를 위한 무결함 박막 SiO2

Defect Free Thin SiO2 Thermally Grown On Silicon For Mega Bit DRAM Capacitor

The thermal oxidation recipe has been optimized for very thin (12 nm) capacitor oxide for Mega bit DRAM. The time dependent dielectric breakdown characteristics show that the breakdown voltage and time to breakdown are very high and uniform, indication that our oxide is defect free and suitable for DRAM capacitor dielectric. To our knowledge this is the best oxide quality obtained up tp now around 10 nm.