한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Self-healing 방법을 이용한 박막의 절연파괴 현상 연구

A study on the Electric Breakdown Mechanisms using Self-helfing Method of Thin Film

  • 윤중락 (명지대학교 공과대학 전기공학과) ;
  • 권정열 (명지대학교 공과대학 전기공학과) ;
  • 서강원 (명지대학교 공과대학 전기공학과) ;
  • 박인환 (현대전자(주)) ;
  • 이헌용 (명지대학교 공과대학 전기공학과)
  • Yun, J.R. (Depart. of Electric Eng., Myong Ji Univ.) ;
  • Kwon, C.R. (Depart. of Electric Eng., Myong Ji Univ.) ;
  • Se, K.W. (Depart. of Electric Eng., Myong Ji Univ.) ;
  • Park, I.H. (HYUNDAI Electronics Co., Ltd.) ;
  • Lee, H.Y. (Depart. of Electric Eng., Myong Ji Univ.)
  • 발행 : 1992.11.07
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초록

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

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