한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1992년도 추계학술대회 논문집
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- Pages.14-17
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- 1992
비휘발성 SNOSFET 기억소자의 동작특성에 관한 전산모사
Computer Simulation on Operating Characteristics of Nonvolatile SNOSFET Memory Devices
- 김주연 (광운대학교 대학원 전자재료공학과) ;
- 이상배 (광운대학교 대학원 전자재료공학과) ;
-
이영희
(광운대학교 대학원 전자재료공학과)
;
- 서광열 (광운대학교 대학원 전자재료공학과)
- Kim, Joo-Yeon (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
- Lee, Sang-Bae (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
-
Lee, Young-Hie
(Dept. of Electronic Materials Eng. Kwangwoon Univ.)
;
- Seo, Kwang-Yell (Dept. of Electronic Materials Eng. Kwangwoon Univ.)
- 발행 : 1992.11.07
초록
To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.
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