한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

As-Se-S-Ge계 박막의 비정질-비정질 상변환 연구

A study on amorphous-amorphous phase transition of As-Se-S-Ge thin films

  • 이성준 (광운대학교 전자재료공학과) ;
  • 이영종 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Lee, S.J. (Dept. of Electronics materials Eng. Kwangwoon Univ.) ;
  • Lee, Y.J. (Dept. of Electronics materials Eng. Kwangwoon Univ.) ;
  • Chang, H.B. (Dept. of Electronics materials Eng. Kwangwoon Univ.) ;
  • Kim, J.B. (Dept. of Electronics Eng. Chosun Univ.)
  • 발행 : 1992.11.07
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초록

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

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