Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study for development of a dielectric protection layer in PDP (I) (The annealing characteristics of thickness-optimized $Al_2O_3/MgO$)

PDP용 유전체 보호막 재료 개발을 위한 연구 (I) (두께 최적화된 $Al_2O_3/MgO$의 열처리 특성 )

  • Jeoung, Jin-Man (Dept.of Electronic Materials Eng., Kwangwoon University) ;
  • Yim, Ki-Ju (Dept.of Electronic Materials Eng., Kwangwoon University) ;
  • Shin, Kyung (Dept.of Electronic Materials Eng., Kwangwoon University) ;
  • Lee, Hyun-Yong (Institute of New Technology, Kwangwoon University) ;
  • Chung, Hong-Bay (Dept.of Electronic Materials Eng., Kwangwoon University)
  • 정진만 (광운대학교 공대 전자재료공학과) ;
  • 임기주 (광운대학교 공대 전자재료공학과) ;
  • 신경 (광운대학교 공대 전자재료공학과) ;
  • 이현용 (광운대학교 신기술연구소) ;
  • 정흥배 (광운대학교 공대 전자재료공학과)
  • Published : 1998.06.01
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Abstract

In this study, $Al_2O_3/MgO$ bilayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(P1asma Display Panel). The thickness of $Al_2O_3/MgO$ bilayer was optimized by the Matrix Theory for the fabrication of antireflection structure for 5350A wavelength. The secondary electron emission yields of as-deposited film and annealed film were measured and compared, the bilayer was considered for the applicability as PDP. XRD showed the strong (200) primary peak of MgO. The intensity of (200) peak in the film annealed at 300C was decreased. As the result of SEM analysis for MgO films and Alz03 films, it is considered that the morphology of the films were improved of roughness and it were condensed by annealing.

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