Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of the electrical characteristics with back-gate bias in n-channel thin film SOI MOSFET

N-채널 박막 SOI MOSFET의 후면 바이어스에 따른 전기적 특성 분석

  • Published : 1999.11.01
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Abstract

In this paper, we have systematically investigated the variation of electrical characteristics with back-gate bias of n-channel SOI MOSFET\\`s. When positive bias is applied back-gate surface is inverted and back channel current is increased. When negative bias is applied back-gate surface is accumulated but it does not affect to the electrical characteristics.

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