Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Electrical Characteristics of Ge-Nanocrystals-Embeded MOS Structure

  • Choi, Sam-Jong (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Park, Byoung-Jun (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering and Institute for Nano Science, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering and Institute for Nano Science, Korea University)
  • Published : 2005.11.10
Download PDF
⟨ Previous Next ⟩

Abstract

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

Keywords