Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of carrier mobility on Silicon-Germanium on Insulator MOSFEI devices with a Si-strained layer

Si-strained layer를 가지는 Silicon-Germanium on Insulator MOSFET에서의 이동도 개선 효과

  • Cho, Won-Ju (Department of Electronic materials engineering Kwangwoon Univ.) ;
  • Koo, Hyun-Mo (Department of Electronic materials engineering Kwangwoon Univ.) ;
  • Lee, Woo-Hyun (Department of Electronic materials engineering Kwangwoon Univ.) ;
  • Koo, Sang-Mo (Department of Electronic materials engineering Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic materials engineering Kwangwoon Univ.)
  • 조원주 (광운대학교 전자재료공학과) ;
  • 구현모 (광운대학교 전자재료공학과) ;
  • 이우현 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2010.04.01
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Abstract

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

Keywords