Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Phase change properties of amorphous $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ chalcogenide thin films.

비정질 $Ge_1Se_1Te_2$과 $Ge_2Se_2Te_5$ 칼코게나이드박막의 상변화특성

  • Chung, Hong-Bay (Department of Electronic Materials Engineering, College of Electronic and Information Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, College of Electronic and Information Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, College of Electronic and Information Engineering, Kwangwoon University)
  • 정홍배 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 조원주 (광운대학교 전자정보공과대학 전자재료공학과) ;
  • 구상모 (광운대학교 전자정보공과대학 전자재료공학과)
  • Published : 2006.06.22
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Abstract

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

Keywords