한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.51-54
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- 2007
Inverted OLED Structure for 3.5 inch Full Color AMOLED Display on a-Si TFT Backplane
- Park, Jae-Hee (LG Philips LCD) ;
- Park, Jae-Young (LG Philips LCD) ;
- Hwang, Kwang-Jo (LG Philips LCD) ;
- Choi, Hee-Dong (LG Philips LCD) ;
- Myoung, Nho-Hoon (LG Philips LCD) ;
- Lee, Seok-Jong (LG Philips LCD) ;
- Park, Seung-Chul (LG Philips LCD) ;
- Kim, Jung-Bum (LG Chem, Ltd.) ;
- Hahm, Yun-Hye (LG Chem, Ltd.) ;
- Noh, Jeoung-Kwen (LG Chem, Ltd.) ;
- Lee, Jung-Hyoung (LG Chem, Ltd.) ;
- Kim, Jong-Seok (LG Chem, Ltd.) ;
- Kang, Min-Soo (LG Chem, Ltd.)
- Published : 2007.08.27
Abstract
Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.