4 inch QVGA AMOLED display driven by GaInZnO TFT

  • Kwon, Jang-Yeon (Display Lab, Samsung Advanced Institute of Technology) ;
  • Son, Kyoung-Seok (Display Lab, Samsung Advanced Institute of Technology) ;
  • Jung, Ji-Sim (Display Lab, Samsung Advanced Institute of Technology) ;
  • Kim, Tae-Sang (Display Lab, Samsung Advanced Institute of Technology) ;
  • Ryu, Myung-Kwan (Display Lab, Samsung Advanced Institute of Technology) ;
  • Park, Kyung-Bae (Display Lab, Samsung Advanced Institute of Technology) ;
  • Kim, Jung-Woo (Display Lab, Samsung Advanced Institute of Technology) ;
  • Lee, Young-Gu (Display Lab, Samsung Advanced Institute of Technology) ;
  • Kim, Chang-Jung (Display Lab, Samsung Advanced Institute of Technology) ;
  • Kim, Sun-Il (Display Lab, Samsung Advanced Institute of Technology) ;
  • Park, Young-Soo (Display Lab, Samsung Advanced Institute of Technology) ;
  • Lee, Sang-Yoon (Display Lab, Samsung Advanced Institute of Technology) ;
  • Kim, Jong-Min (Display Lab, Samsung Advanced Institute of Technology)
  • Published : 2007.08.27

Abstract

We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-Si TFT. The electron mobility of GaInZnO TFT is $2.6\;cm^2/Vs$ and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV.

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