한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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4.1” Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-IGZO Thin-film Transistors

  • Jeong, J.K. (Corporate R&D Center, Samsung SDI Co.) ;
  • Kim, M. (Corporate R&D Center, Samsung SDI Co.) ;
  • Jeong, J.H. (Corporate R&D Center, Samsung SDI Co.) ;
  • Lee, H.J. (Corporate R&D Center, Samsung SDI Co.) ;
  • Ahn, T.K. (Corporate R&D Center, Samsung SDI Co.) ;
  • Shin, H.S. (Corporate R&D Center, Samsung SDI Co.) ;
  • Kang, K.Y. (Corporate R&D Center, Samsung SDI Co.) ;
  • Park, J.S. (Corporate R&D Center, Samsung SDI Co.) ;
  • Yang, H, (Corporate R&D Center, Samsung SDI Co.) ;
  • Chung, H.J. (Corporate R&D Center, Samsung SDI Co.) ;
  • Mo, Y.G. (Corporate R&D Center, Samsung SDI Co.) ;
  • Kim, H.D. (Corporate R&D Center, Samsung SDI Co.) ;
  • Seo, H. (Corporate R&D Center, Samsung SDI Co.)
  • Published : 2007.08.27
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Abstract

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

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